Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /
| Autor Principal: | |
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| Formato: | Libro |
| Lengua: | inglés |
| Datos de publicación: |
New Delhi :
Springer India : Imprint: Springer,
2014.
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| Temas: | |
| Acceso en línea: | http://dx.doi.org/10.1007/978-81-322-1635-3 |
| Resumen: | The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated. |
| Descripción Física: | xiv, 134 p. : il. |
| ISBN: | 9788132216353 |
| DOI: | 10.1007/978-81-322-1635-3 |
Tabla de Contenidos:
- Introduction: Multi State Devices and Logic
- Quantum Dot Gate Field Effect Transistor Device Structures
- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization
- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling
- Quantum Dot Gate NMOS Inverter
- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter
- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET)
- Performance in SUB-25nm Range
- Conclusions.