Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /

Detalles Bibliográficos
Autor Principal: Karmakar, Supriya
Formato: Libro
Lengua:inglés
Datos de publicación: New Delhi : Springer India : Imprint: Springer, 2014.
Temas:
Acceso en línea:http://dx.doi.org/10.1007/978-81-322-1635-3
Resumen:The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Descripción Física:xiv, 134 p. : il.
ISBN:9788132216353
DOI:10.1007/978-81-322-1635-3