High-Bandwidth Memory Interface

Detalles Bibliográficos
Autor Principal: Kim, Chulwoo
Otros autores o Colaboradores: Lee, Hyun-Woo, Song, Junyoung
Formato: Libro
Lengua:inglés
Datos de publicación: Cham : Springer International Publishing : Imprint: Springer, 2014.
Series:SpringerBriefs in Electrical and Computer Engineering,
Temas:
Acceso en línea:http://dx.doi.org/10.1007/978-3-319-02381-6
Resumen:This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   â_¢Â Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; â_¢Â Presents state-of-the-art techniques for memory interface design; â_¢Â Covers memory interface design at both the circuit level and system architecture level.
Descripción Física:viii, 88 p. : il.
ISBN:9783319023816
ISSN:2191-8112
DOI:10.1007/978-3-319-02381-6
Tabla de Contenidos:
  • An introduction to high-speed DRAM
  • An I/O Line Configuration and Organization of DRAM
  • Clock generation and distribution
  • Transceiver Design
  • TSV Interface for DRAM.